摘要：1简介新兴的IoT（物联网）市场对各种设备通过Internet进行无缝通信具有启发意义。但IoT产品各不相同，设备和数据的标准化尚未建立。这为设计者带来了诸多挑战，其中，为产品和应用程序寻找最佳的设计平台就是一大挑战。就可视化loT平台而言，

摘要：Computer simulation was used for optimizing a hot zone for Czochralski （CZ） silicon crystal growth. The heater structure and heat shield material were investigated. With this optimized hot zone, the temperature gradient near the crystal/melt interface increased and the CZ crystal could be grown at a faster rate. It is a great contribution for saving power consumption.

摘要：10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the *** SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.

摘要：silicon-based material is one of the most promising substitutes of widely used graphite anodes for the next generation Li-ion batteries due to its high theoretical capacity,low working potential,environmental friendliness,and abundant natural ***,the huge volume expansion and serious interfacial side reactions during lithiation and delithiation progresses of the silicon anode are the key issues which impede their further practical *** designs of silicon nanostructures are effective ways to address these *** this progress report,we firstly highlight the fundamental scientific problems,and then focus on recent progresses in design,preparation,in-situ characterization methods and failure mechanism of nanostructured silicon anode for high capacity lithium *** also summarize the key lessons from the successes so far and offer perspectives and future challenges to promote the applications of silicon anode in practical lithium batteries.

摘要：A new type of silica optical micro-kayak cavity fabricated on a silicon chip is designed and demonstrated. This micro-kayak cavity with two straight sides and two semi-circle sides can be used to achieve a compact and flexible arrangement in the design of integrated photonic circuits. The micro-kayak cavity can also be embedded with a Bragg reflection grating in the straight sides for frequency selection using a micro-kayak cavity laser doped with a rare-earth ion. We describe the fabrication methods for the micro-kayak cavity, obtain its spectra, and discuss its potential applications.

摘要：2012年3月5日，silicon Laboratories宣布推出Precision32TM单片机（MCU）系列产品，为32位MCU市场带来前所未有的设计灵活性。基于ARM CodexTM 3处理器的新型Precision32系列产品包括32位SiM3U1XX和SiM3C1XXMCU产品，具有引脚兼容的集成USB和非集成USB功能选项。通过提供高度集成的灵活架构，以及丰富的外设集。

摘要：We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.

摘要：芯科科技（silicon Labs）日前宣布针对智能家居市场推出两种最新的无线占用传感器（occupancy sensor）和智能插座参考设计，这些物联网（IoT）可连接设备解决方案旨在让我们的家庭生活变得更安全、更方便、更高效节能。

摘要：silicon Laboratories（芯科实验室有限公司）日前宣布推出具有成本效益、基于USB的D类ToolStick评估套件，使开发人员可以在基于silicon Labs特性丰富的SiM3U1xx Precision32TM单片机（MCU）的32位嵌入式设计中添加数字D类音频功能。

摘要：siliconLaboratories（芯科实验室有限公司）推出具有成本效益、基于USB的D类ToolStick评估套件，使开发人员可以在基于siliconLabs特性丰富的SiM3U1XXPre—cision32单片机（MCU）的32位嵌入式设计中添加数字D类音频功能。