摘要：光恩科技与CCww宣布，已利用silicon Laboratories AeroFONE^TM单芯片手机为客户提供一套完整的参考设计。

摘要：silicon Laboratories公司公布了直接传感器接口技术(DSiT)，允许设计者将传感器和变频器发出的无条件、无补偿、未经过处理的输出信号连接至C8051F350系列MCUs。DSiT性能集成了测试系统所有必需的要素．包括1个多路转接器、1个DAC、1个可编程序增益放大器、1个比较器、一个24位sigma—delta ADC、1个单板基准电压、

摘要：半导体定制时钟解决方案领先供应商silicon Clocks宣布了一项CMEMS—Zero ThermalTM无源温度补偿技术，使石英晶体失去了竞争力。采用该项专利技术生产的MEMS谐振器温度稳定性可与石英晶体相媲美，并能极大地简化振荡器的设计，降低功率、缩小电路尺寸。silicon Clocks已开发出了一种完全无源（零功率，无专门的电子电路）的机械温度补偿方法，

摘要：益登科技所代理的高效能模拟与silicon Laboratories日前针对以太网络用电装置（Powered Device，PD）应用推出业界最高集成度的IEEE 802．3af以太网络供电（Power over Ethernet，PoE）控制器。Si3400是唯一内置二极管桥式电路（diode bridge）、瞬时突波抑制电路和开关稳压器FET晶体管的PD控制器。Si3400控制器的高集成度大幅减少元器件用料和电路板面积，这简化了PoE的应用设计和加快产品上市时间。

摘要：全球领先的测试、测量和监测仪器提供商--泰克公司（NYSE：TEK）日前宣布，HDMI Licensing LLC和silicon Image公司将参加泰克2007年HDMI设计和验证研讨会，展现他们对整个HDMI市场和HDMI1．3实现技术的理解。本次研讨会将于7月11日到7月20日在亚太地区主要城市举行，包括上海、深圳、台北、首尔和新加坡，泰克将在研讨会上演示HDMI1．3b一致性测试解决方案。

摘要：随着全球节能意识的抬头，低功耗节能技术日益受到关注。因应这一市场发展趋势，专业电子元器件代理商益登科技与其代理的高性能模拟与混合信号IC领导厂商silicon Laboratories共同在深圳、杭州、台中、台北四地举办了“2008年产品暨技术研讨会，节能嵌入式系统设计研讨会”。本系列活动于7月底圆满落幕，吸引了共约400位电子业界工程师及业内相关人士踊跃报名。

摘要：高性能模拟与混合信号IC领导厂商silicon Laboratories（芯科实验室有限公司，Nasdaq：SLAB）于2008年9月10日发表具有业界最高稳定性的全CMOS振荡器，以此进入消费性定时市场，新产品不仅交货时间较短、成本较低、可靠度较高且性能更佳，成为一种取代石英振荡器（xo）的理想方案。在所有针对大量消费性应用的振荡器中，新推出的Si500系列拥有更宽的频率范围、更广泛的差分和单端时钟选择、极低的总功耗，并提供更低的抖动。此种结合为数码相机、摄像机、打印机、个人计算机外设、液晶显示、服务器和存储装置等应用的设计者提供前所未有的弹性。

摘要：专业电子元器件代理商益登科技（TSE：3048）所代理的高效能模拟与混合信号IC领导厂商silicon Laboratories日前针对以太网络用电装置（Powered Device，PD）应用推出业界最高集成度的IEEE 802．3af以太网络供电（Power over Ethemet，PoE）控制器。Si3400是内置二极管桥式电路（diode bridge）、瞬时突波抑制电路和开关稳压器FET晶体管的PD控制器。Si3400控制器的高集成度大幅减少元器件用料和电路板面积，这简化了PoE的应用设计和加快产品上市时间。

摘要：A high Si reduced activation ferritic/martensitic(RAFM) steel for nuclear structure application is successfully designed by using Calphad method. The main designed chemical composition is C 0.18–0.22%, Cr10.0–10.5%, W 1.0–1.5%, Si 1.0–1.3%, V+Ta 0.30–0.45%, and Fe in balance. High Si design brings excellent corrosion resistance, while low activation is advantageous in the nuclear waste processing. The experimental results indicate that the newly designed high Si RAFM steel had full martensitic structure and uniformly distributed fine second phase particles, and exhibited excellent mechanical properties and corrosion resistance. Compared to the P91 steel, this new RAFM steel designed by Calphad method is expected to be a promising candidate used in nuclear power generation, which also provides a new and effective approach to the development of RAFM steel for nuclear application.

摘要：A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.