摘要：We report applications of a metallic film and a phase matching layer (PML) to increase the reflectivity of the cavity mirror in a long-wavelength InP-based vertical-cavity surface-emitting laser (VCSEL). The synthesis of the InGaAsP/InP distributed-Bragg reflector (DBR) with an Au film and the InP PML leads to the decrease of periods of the DBR multilayer stacks from 33 to 20 while keeping the reflectivity of the structure over 99%. The reflectivity over the whole forbidden band is significantly increased and become flatter compared to the bare DBR. The use of smaller DBR periods in a long wavelength VCSEL makes the epitaxial growth well controllable, decrease of the heat resistance, and decrease of the in-series electrical resistance of the devices. This can improve the reliability of the VCSEL growth and possibly cut down the cost of VCSEL devices.

摘要：Through the reversible isomerization of trans-cis-trans under the linear polarization light, the molecules of azo materials have the same tropism which is vertical to the polarization of light. This means that azo materials have photo-induced birefringence which is related to optical power and polarization angle of the light. Based on the photo-induced birefringence of azo materials, we design a new type of optically pumped semiconductor vertical external cavity surface emitting laser （OPS-VECSEL） which can control the polarization and frequency of the ejection laser. The functional molecules of azo materials are [3-azo- （4＇nitro）]- （9-ethyl）-carbazole （ANECz）.