摘要：The effect of an external electric field on the bandgap is observed for two proposed heterostructures graphitic carbon nitride-graphene-hexagonal boron nitride(g-C_3N_4/G/h-BN) in hexagonal stack(AAA) and graphene-graphitic carbon nitridehexagonal boron nitride(G/g-C_3N_4/h-BN) in Bernal stack(ABA). Their inter-layer distance, binding energy and effective mass has also been calculated. The structure optimization has been done by density functional theory(DFT) with van der Waals corrections. The inter-layer distance, bandgap, binding energy and effective mass has been listed for these heterostructures and compared with that of bilayer graphene(BLG), graphene-hexagonal boron nitride(G/h-BN) hetero-bilayer, graphene-graphitic carbon nitride(G/g-C_3N_4) hetero-bilayer and graphitic carbon nitride-graphene-graphitic carbon nitride(g-C_3N_4/G/g-C_3N_4) heterostructure in Bernal and hexagonal stack. g-C_3N_4/G/h-BN is found to offer lower effective mass and larger bandgap opening among the considered heterostructures.

摘要：随着器件小型化,封装应力对电性能的影响越来越受到重视。应力对芯片电气性能影响主要表现在测试参数的偏移甚至失效。bandgap设计的参考电压具有精度高、温漂小等特点。bandgap精度越高对外部应力越敏感。作者通过对封装体开盖前后测试参数的比较发现,封装应力是造成产品参考电压漂移的主要原因。他们通过统计分析得出封装应力对复位电压有10mV的影响,可以通过修改bandgap的α值设计,修改修调程序以后器件复位电压分布的中心值回到2.63V期望值附近,测试良率因此得到提高。

摘要：A novel fluid sensing system based on side-polished optical fiber(SPOF)is proposed,which realizes the fluid replaceability and effective refractive index(RI)sensing *** investigations demonstrate that the photonic bandgap effect can be obtained if the RI of liquid is higher than that of substrate material in the wavelength range *** relationship between bandgap edge wavelength and RI is studied *** SPOF with a depth of 57μm is used in the experiment to realize the construction of the fluid *** filling three different liquids,the result shows that the wavelength of the bandgap edge has a red shift with RI increased,which is nearly linear in the RI range of 1.56—1.6 with a sensitivity about 5543.64 nm/*** proposed sensing system can be flexibly applied to the field of fluid characteristic sensing such as biochemical solution characteristic detections.

摘要：As the base of modern electronic industry,field-effect transistor(FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional(2D) MoS_2, but the experimentally achieved maximal mobility(1000 cm^2 V^(-1) s^(-1)) is still obviously lower than those of classical semiconductors(1,400 and 5,400 cm^2 V^(-1) s^(-1) for Si and InP). Here, for the first time, we report on monolayer antimonide phosphorus(SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 10~4 cm^2 V^(-1) s^(-1)based on density functional theory calculation. In particular,α-Sb_(1-x)P_x monolayers possess 0.3–1.6 eV bandgaps when0.1 ≤ x ≤ 1, which are greater than the minimum bandgap(0.4 eV) required for large on/off ratio of FET. Surprisingly,the carrier mobilities of α-Sb_(1-x)P_x monolayers exhibit very high upper limit approaching 2×10~4 cm^2 V^(-1) s^(-1) when 0 ≤x ≤ 0.25 due to the ultra-small effective mass of holes and electrons. This work reveals that 2D SbP with both suitable bandgap and high mobility could be a promising candidate as eco-friendly high-performance FET channel materials avoiding short-channel effect in the post-silicon era, especially when considering the recent experimental success in realizing arsenide phosphorus(AsP) with similar structure.

摘要：A CMOS charge-pump circuit with adjustable current is presented.A bandgap voltage reference,a low drop-out regulator,and a capacitive DC-DC voltage-booster are used to generate supply voltage for the current *** generated voltage is insensitive to the changes of external power supply voltage and temperature,while the current reference itself is insensitive to *** circuit is designed in 0.18μm 1.8V standard digital CMOS *** simulated results show that the performance of the circuit is satisfied.

摘要：A novel defected ground structure （DGS） for the microstrip line is proposed in this paper. The DGS lattice has more defect parameters so that it can provide better performance than the conventional dumbbell-shaped DGS. Selectivity is improved by 97.2% with a sharpness factor of 24.6%. The method is applied to the design of a low-pass filter to confirm validity of the proposed DGS.

摘要：基于TSMC BCD 180nm工艺设计并流片测试了一款低压低温漂带隙基准芯片,用于高能物理实验。该芯片主要基于NICA-MPD探测器工程项目的需求,实现在极端温度环境中正常输出电压的功能。该芯片的核心模块带隙基准模块采用二阶温度补偿结构,测试结果表明该芯片在1.8V电源电压下,能稳定输出0.9V电压,功耗约为46.5μW,在-40~120℃内温度系数约为29×10^(-6)/℃,电源抑制比为-76.8dB。

摘要：本文在对传统CMOS带隙电压基准电路的分析上,综合一阶温度补偿,电流反馈和电阻二次分压的技术整个电路采用CHARTER 0.35um CMOS工艺实现,采用MentorGraphics的Eldo工具进行仿真,结果表明该电路具有低温度系数和高电源抑制比.

摘要：本文提出了一种用于Buck变换器的带隙基准电压源,该电路结构简单,性能可靠,可移植性好。当温度在-40℃~125℃范围内变化时,基准电压的典型温度系数为7.3ppm/℃。本设计采用0.6μm HVCD工艺进行仿真验证,Hspice仿真结果表明该带隙基准电压源能够满足Buck变换器系统的需求。