摘要：A novel dual gate oxide （DGO） process is proposed to improve the performance of high voltage CMOS （HVCMOS） devices and the compatibility between thick gate oxide devices and thin gate oxide devices. An extra sidewall is added in this DGO process to round off the step formed after etching the thick gate oxide and poly-silicon. The breakdown voltages of high voltage nMOS （HVnMOS） and high voltage pMOS （HVpMOS） are 168 and - 158V, respectively. Excellent performances are realized for both HVnMOS and HVpMOS devices. Experimental results demonstrate that the HVCMOS devices work safely at an operation voltage of 100V.

摘要：People have attached importance to protecting the electro-magnetic environment in the *** author introduces the formulation of EMC *** national standard"Limits and Methods of Measurement of Radio Disturbance Characteristics of Electronic Lighting Control Equipment" and ZW1 suppression inductor were formulated and developed by Zhejiang Research Institute of Stage Design *** country has started the authentication work of EMC Directive.