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A semi-custom design methodology for design performance optimization
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《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》2008年 第4期9卷 510-516页
作者:Dong-ming LV Pei-yong ZHANG Dan-dan ZHENG Xiao-lang YAN Bo ZHANG Li QUANInstitute of VLSI Design Zhejiang University Hangzhou 310027 China 
We present a semi-custom design methodology based on transistor tuning to optimize the design performance. Compared with other transistor tuning approaches, our tuning process takes the cross-talk effect into account ...
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The Method of the SiC MOSFET Replacing the Si IGBT in the Traditional Power Electronics Converter without Redesigning the Main Circuit and the Driver Circuit
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《Energy Engineering》2021年 第4期118卷 1155-1170页
作者:Lei Zhang Dejian Yang Lei Ren Yun Cheng Qiufeng Yan Yinlong YuanSchool of Electrical EngineeringNantong UniversityNantong226019China 
As a wide bandgap power electronics device,the SiC MOSFET has a lot of advantages over the traditional Si *** the Si IGBT with the SiC MOSFET in the existing power electronics converter is an effective means to improv...
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Design and cold test of S-BAND cavity BPM for HLS
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《Science China(Physics,Mechanics & Astronomy)》2011年 第S2期54卷 292-295页
作者:LUO Qing SUN BaoGen JIA QiKa HE DuoHui FANG JiaNational Synchrotron Radiation LaboratorySchool of Nuclear Science and TechnologyUniversity of Science and Technology of ChinaHefei 230029China 
An S-band cavity BPM is designed for a new injector in National Synchrotron Radiation Laboratory. A re-entrant position cavity is tuned to the TM110 mode as position cavity. Cut-through waveguides are used as pickups ...
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