摘要：A low-power,high-frequency CMOS peak detector is proposed. This detector can detect RF signal and base-band signal peaks. The circuit is designed using SMIC 0.35μm standard CMOS technology. Both theoretical calculations and post simulations show that the detection error is no more than 2% for various temperatures and processes when the input amplitude is larger than 400mV. The detection bandwidth is up to 10GHz, and its static current dissipation is less than 20μA.

摘要：Three kinds of coplanar waveguides （CPWs） are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate （LRS）, LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon （HRS） substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.