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检索条件"主题词=high speed"
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Low power and high write speed SEU tolerant SRAM data cell design
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《Science China(Technological Sciences)》2015年 第11期58卷 1983-1988页
作者:WANG Li ZHANG GuoHe ZENG YunLin SHAO ZhiBiaoDepartment of Microelectronics Xi'an Jiaotong University 
As feature size scales down, reliability issues like single event upset(SEU) have become serious for circuit and system designers, especially for those who work on memory and latch designs. In this paper, an improved ...
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Design of high speed LVDS transceiver ICs
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《Journal of Semiconductors》2010年 第7期31卷 151-155页
作者:徐建 王志功 牛晓康Institute of RF-& OE-ICsSoutheast University 
The design of low-power LVDS(low voltage differential signaling) transceiver ICs is *** LVDS transmitter integrates a common-mode feedback control on chip,while a specially designed pre-charge circuit is proposed to...
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A high speed,12-Channel Parallel,Monolithic Integrated CMOS OEIC Receiver
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《Journal of Semiconductors》2007年 第9期28卷 1341-1345页
作者:朱浩波 毛陆虹 余长亮 陈弘达 唐君天津大学电子信息工程学院天津300072 中国科学院半导体研究所北京100083 
The design and fabrication of a high speed, 12-channel monolithic integrated CMOS optoelectronic integrated circuit (OEIC) receiver are reported. Each channel of the receiver consists of a photodetector, a transimpe...
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Experimental and Numerical Investigation of Micro Tip Injection in a highspeed Axial Compressor Rotor
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《Transactions of Nanjing University of Aeronautics and Astronautics》2024年 第6期41卷 750-765页
作者:LIU Wenhao CHU Wuli ZHANG Haoguang WANG Hao WANG GuangSchool of Power and EnergyNorthwestern Polytechnical UniversityXi’an 710072P.R.China School of Aeronautics and AstronauticsGuilin University of Aerospace TechnologyGuilin 541004P.R.China 
A series of experiments and numerical simulations are carried out in a high-speed axial compressor to systematically investigate the influence and underlying flow mechanisms of micro tip injection on enhancing compres...
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Multiplexer Design Applied to high-speed Signal Transmission
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《Journal of Semiconductors》2008年 第6期29卷 1040-1043页
作者:曹寒梅 杨银堂 蔡伟 陆铁军 王宗民西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室西安710071 北京微电子技术研究所北京100076 
A multiplexer with a low-distortion high-bandwidth analog switch is presented. The gate-to-source voltage of the switch is set by the combined on-voltage of a pMOS and an nMOS,and the difference between its gate-sourc...
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Robust design of a 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm CMOS
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《Journal of Semiconductors》2013年 第10期34卷 121-127页
作者:程龙 朱瑜 朱凯 陈迟晓 任俊彦State Key Laboratory of ASIC & SystemFudan University Emensa Technology Co.Ltd 
A 500-MS/s 10-bit triple-channel current-steering DAC in 40 nm 1P8M CMOS advanced technology is proposed. The central symmetry random walk scheme is applied for current source arrays to avoid mismatching effects in na...
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Random projection method for ultra wideband signal acquisition
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《The Journal of China Universities of Posts and Telecommunications》2011年 第6期18卷 14-21页
作者:LIN Jie SHI Guang-ming CHEN Xu-yang ZHANG LiSchool of Electronic Engineering Xidian University Xi'an 710071 China 
high-speed high-resolution analog-to-digital (A/D) conversion demanded by ultra wideband (UWB) signal processing is a very challenging problem. This paper proposes a parallel random projection method for UWB signa...
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Solenoid Actuator Design for Improvement of Response speed
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《Journal of Energy and Power Engineering》2016年 第5期10卷 324-333页
作者:Baek Ju SungReliability Assessment Center Korea Institute of Machinery & Materials Daejeon 34103 Korea 
The main design factors which effect on operating speed of solenoid actuator for valve operation are mass of plunger, electromagnetic motive force, inductance and return spring, and these factors are not independent b...
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Design of RTD-Based TSRAM
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《Journal of Semiconductors》2004年 第2期25卷 138-142页
作者:程玥 潘立阳 许军清华大学微电子学研究所北京100084 
A RTD-based TSRAM cell is *** mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power *** architecture of a TSRAM syst...
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11.6-GHz 0.18-μm monolithic CMOS phase-locked loop
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《Journal of Southeast University(English Edition)》2007年 第1期23卷 35-38页
作者:王骏峰 冯军 李义慧 袁晟 熊明珍 王志功 胡庆生东南大学射频与光电集成电路研究所南京210096 
A design of a ll. 6-GHz phase-locked loop (PLL) fabricated in 49-GHz 0. 18-μm CMOS (complementary metal-oxide-semiconductor transistor) technology is described. An analog multiplier phase detector (PD), a one-p...
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