摘要：The interface properties in two-dimensional(2D)layered materials and their van der Waals(vdW)homo-/heterostructures are of importance in both uncovering novel physical phenomena and optimizing device *** considerable research interest and enthusiasm direct toward the interlayer coupling in 2D homo-and heterostructures,there is limited research on the coupling at the 2D layered material-substrate *** limitation is due to the challenges in achieving direct ***,the coupling mechanisms at the 2D layered material-substrate interface is ambiguous,which needs greater *** this study,we have systematically investigated the interface coupling between monolayer WS_(2)and its supported substrates using high-temperature and high-vacuum in-situ Raman spectroscopy through monitoring the low-frequency Raman mode of monolayer WS_(2).Our findings reveal that both interfacial spacing and strain can significantly affect the coupling strength between the monolayer WS_(2)and the supported *** notably,we found that the strategic introduction of appropriate interfacial strain can effectively enhance the interface ***,we have succeeded in achieving effective regulation of the sample-substrate coupling via a convenient way of controlling the cooling process during *** findings contribute to a deeper understanding of the coupling correlation between 2D layered materials and substrates,which is of great significance for the design and optimization of high-performance devices based on 2D layered semiconductors.