摘要：A new purification process was developed to remove impurities in metallurgical grade silicon （MG-Si） by electromagnetic induction slag melting （EISM）. Vacuum melting furnace was used to purify boron in different slag systems. The results show that the removal effect in SiO2-CaO-Al2O3 systems is better than that in other slag systems by EISM. The boron content in MG-Si is successfully reduced from 1.5× 10^-5 to 0.2× 10^-5 during EISM at 1 823 K for 2 h. Meanwhile, Al, Ca and Mg elements in MG-Si are also well removed and their removal efficiencies reach 85.0%, 50.2% and 66.7%, respectively, which indicates that EISM is very effective to remove boron and metal impurities in silicon.

摘要：The removal of phosphorus in metallurgical grade silicon （MG-Si） by water vapor carried with high purity argon was examined. The effect of the nozzle types, refining time, refining temperature, refining gas temperature and refining gas flow rate on the phosphorus removed was investigated by the self-designed gas blowing device. The optimal refining conditions are nozzle type of holes at bottom and side, refining time of 3 h, refining temperature of 1793 K, refining gas temperature of 373 K, refining gas flow rate of 2 L/min. Under these optimal conditions, the phosphorus content in MG-Si is reduced from 94×10^-6 initially to 11×10-6 （mass fraction）, which indicates that gas blowing refining is very effective to remove phosphorus in MG-Si.