摘要：This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff *** electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit ***,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic *** electron’s peak drift velocity compensates for the lost transit *** improving the 3 dB bandwidth of the PD’s photo *** obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers.