摘要：A new purification process was developed to remove impurities in metallurgical grade silicon （MG-Si） by electromagnetic induction slag melting （EISM）. Vacuum melting furnace was used to purify boron in different slag systems. The results show that the removal effect in SiO2-CaO-Al2O3 systems is better than that in other slag systems by EISM. The boron content in MG-Si is successfully reduced from 1.5× 10^-5 to 0.2× 10^-5 during EISM at 1 823 K for 2 h. Meanwhile, Al, Ca and Mg elements in MG-Si are also well removed and their removal efficiencies reach 85.0%, 50.2% and 66.7%, respectively, which indicates that EISM is very effective to remove boron and metal impurities in silicon.