摘要：The design method for a high-voltage SOI trench LDMOS for various trench permittivities, widths and depths is introduced. A universal method for efficient design is presented for the first time, taking the trade-off between breakdown voltage （BV） and specific on-resistance （Rs, on） into account. The high-k （relative permittivity） dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench. An SOI LDMOS with a vacuum trench in the drift region is also discussed. Simulation results show that the high FOM BV2/Rs, on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

摘要：Dual band bandpass filter is designed and optimized for RF wireless applications. The performances of that RF dual band filter are improved especially parameters describing the insertion loss, return losses and rejection. Dual-band bandpass filter using stub loaded resonators is designed and characterized. Theoretical results are compared with experimental data. This comparison shows that the magnitude of reflection coefficient S11 from ADSTM simulation is better than 28.0 dB, and the insertion loss S21 is less than 0.5 dB. The two rejections are also better than 32.0 dB. The simulated results also show that two central frequencies are located at desired 1.82 and 2.95 GHz. Comparison of measured and simulated results shows frequency drift. The main reason for this frequency shifting is due to some uncertainties. These are obviously due to geometrical and physical parameters H and εr respectively of Duroid substrate used during design and measurements.

摘要：Authors designed an obstacle radar transceiver for ISM band. This work is focused on rectangular microstrip transceiver integrated with innovative metamaterial structure at a height of 3.276 mm from the ground plane. Two rectangular microstrip transceiver is designed for transmitting and receiving purpose. This work is mainly focused on increasing the potential parameters of rectangular microstrip transceiver. RMT along with the proposed innovative metamaterial structure is designed to resonate at 2.259 GHz. Simulation results showed that the impedance bandwidth of the RMT is improved by 575%, return loss is reduced by 391% and efficiency is improved by 28% by incorporating the proposed innovative metamaterial structure. For verifying that the proposed innovative metamaterial structure possesses negative values of Permeability and permittivity within the operating frequency range, Nicolson-Ross-Weir method (NRW) has been employed. An op-amp and comparator is used to compare the return loss of transmitting and receiving RMT. An indicator is used to indicate difference of return loss and power of transmitting and receiving rectangular microstrip transceiver. For all simulation purpose, computer simulation technology-microwave studio (CST-MWS) software has been used.