摘要：A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the *** distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and *** from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated *** analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are *** single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band *** to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode *** single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 *** amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz.

摘要：For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this *** decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is *** effect of the parasitics is analyzed based on calculation and the parallel bonding is *** storage capacitance of power supply is calculated quantitatively to provide large pulse *** ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is ***,a prototype is built to verify the drain modulation circuit *** experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.

摘要：A broadband class-F power amplifier for multiband LTE handsets applications is developed across 2.3- 2.7 GHz. The power amplifier maintains constant fundamental impedance at the output matching circuit which is operating for broadband. The nearly zero of second harmonic impedance and nearly infinity of third harmonic impedance are found for highly efficient class-F PA. The harmonic control circuits are immersed into the broad- band output matching for fundamental frequency. For demonstration, the PA is implemented in InGaP/GaAs HBT process, and tested across the frequency range of 2.3-2.7 GHz using a long-term evolution signal. The presented PA delivers good performance of high efficiency and high linearity, which shows that the broadband class-F PA supports the multiband LTE handsets applications.

摘要：A broadband class-F power amplifier for an S-band handset device is integrated on a 330.82 mm^3 die using an In Ga /GaAs HBT process. With LC serial harmonic traps immersed into the broadband output matching circuit, good harmonic suppression performance can be achieved. A pure resistive impedance of the matching circuit, but near zero at second and infinite at third harmonic frequency, which enhances the efficiency, is obtained across 1.8–2.5 GHz. Tested with a continuous wave（CW） signal, the PA delivers an output power of 34 dBm and achieves a PAE of 57% at 2 GHz. In addition, excellent harmonic suppression levels of less than –53 dBc across the second to fifth harmonic are obtained.

摘要：A two-stage power amplifier operated at 925 MHz was designed and fabricated in Jazz' s 0.35μmSiGe BiCMOS *** was fully integrated excluding the inductors and the output matching *** a single 3.3V supply voltage,the off-chip bonding test results indicated that the circuit has a smallsignal gain of more than 24dB,the input and output reflectance are less than- 24dB and-10dB,re-spectively,and the maximal output power is 23.5 *** output power of 23.1 dBm,the PAE(poweradded efficiency)is 30.2%,the IMD2 and IMD3 are less than- 32 dBc and-46 dBc,*** chip size is 1.27mm ×0.9mm.

摘要：We propose a dual band CMOS power amplifier for mobile WiMAX systems. The power amplifier,combined with an active matching transformer,is fully integrated and fabricated in a 0.13μm CMOS process. The transformer operates at dual bands with active matching circuit. The measured result shows that the transformer efficiency of 78.2% and 70.4% at 2.5 and 3.5GHz are realized,respectively,and 26.5 and 24. 8dB gain are achieved. The PAE reaches 20% and 28% at 2.5 and 3.5GHz, respectively. The third inter-modulation （IM3） is lower than - 30dBc at the 25dBm average power.

摘要：A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry. To improve gain flatness in a simple way, no external component was used in the real circuit except the decoupled bypass capacitors and RF choke. The measured linear gain is 23dB with gain flatness of ＋_ 0.25dB,satisfying the design goal and matching well with simulation results. This 2-stage power amplifier can deliver 31dBm linear output power and 44% power-added efficiency in the 400MHz bandwidth. The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.

摘要：8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.

摘要：A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.

摘要：With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is *** the optimization of the traditional bias network,the gain compression at the low input power level is eliminated *** 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.