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Research on single event transient pulse quenching effect in 90 nm CMOS technology
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《Science China(Technological Sciences)》2011年 第11期54卷 3064-3069页
作者:QIN JunRui CHEN ShuMing LIU BiWei CHEN JianJun LIANG Bin LIU ZhengSchool of Computer Science National University of Defense Technology Changsha 410073 China 
Since single event transient pulse quenching can reduce the SET(single event transient) pulsewidths effectively,the charge collected by passive device should be maximized in order to minimize the propagated *** the pe...
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Influence of quench-induced precipitation on aging behavior of Al-Zn-Mg-Cu alloy
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《Transactions of Nonferrous Metals Society of China》2012年 第6期22卷 1255-1263页
作者:唐建国 陈慧 张新明 刘胜胆 刘文军 欧阳惠 李红萍中南大学材料科学与工程学院长沙410083 上海飞机设计研究院上海200232 
The effects of quenching and aging (T6, T7 and RRA) on the microstructural evolution of an A1-Zn-Mg-Cu alloy were investigated by hardness test, optical microscopy (OM), transmission electron microscopy (TEM) an...
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