摘要：Fused thiophenes refer to oligothienoacenes in which several thiophenes are coupled together via twoor multi-positions and their derivatives. The synthesized organic semiconductors based on fused thiophenes exhibit excellent field effect properties due to their efficient intermolecular S…S interactions and π…π stacking. The performances of organic field-effect transistors (OFETs) depend not only on the materials but also on the devices. Such factors which influence the device performances as device structures, fabrication technologies and interface engineering are extensively investigated based on the fused thiophenes. Searching for new organic semiconductors and improving the device fabrication technologies are two major issues in the development of OFETs.

摘要：This paper presents the design and the experimental measurements of two complementary metal-oxide-semiconductor (CMOS) LC-tuned voltage controlled oscillators (VCO) implemented in a 0.18 μm 6-metal-layer mixed-signal/RF CMOS technology. The design methodologies and approaches for the optimization of the ICs are presented. The first design is optimized for mixed-signal transistor, oscillated at 2.64 GHz with a phase noise of -93.5 dBc/Hz at 500 kHz offset. The second one optimized for RF transistor, using the same architecture, oscillated at 2.61 GHz with a phase noise of -95.8 dBc/Hz at 500 kHz offset. Under a 2 V supply, the power dissipation is 8 mW, and the maximum buffered output power for mixed-signal and RF transistor are -7 dBm and -5.4 dBm, respectively. Both kinds of oscillators make use of on-chip components only, allowing for simple and robust integration.

摘要：Flexible thin-film organic semiconductor devices have received wide attention due to favorable properties such as light-weight,flexibility,reproducible semiconductor resources,easy tuning of functional properties via molecular tailoring,and low cost large-area *** them,ultraflexible electronics,usually with minimum bending radius of less than 1 mm,are essential for the development of epidermal and bio-implanted electronics,wearable electronics,collapsible and portable electronics,three dimensional(3D) surface compilable electronics,and *** review firstly gives a brief introduction of development from flexible to ultraflexible organic semiconductor electronics,and design of ultraflexible devices,then summarizes the recent advances in ultraflexible thin-film organic semiconductor devices,focusing on organic field effect transistors,organic light-emitting diodes,organic solar cells and organic memory devices.

摘要：为了优化传统AlGaN/GaN high electron mobility transistors结构表面电场分布,提高器件击穿电压和可靠性,本文利用不影响AlGaN/GaN异质结极化效应的Si3N4钝化层电荷分布,提出了一种Si3N4钝化层部分固定正电荷AlGaN/GaN high electron mobility transistors新结构.Si3N4钝化层中部分固定正电荷通过电场调制效应使表面电场分布中产生新的电场峰而趋于均匀.新电场峰使得新结构栅边缘和漏端高电场有效降低,器件击穿电压从传统结构的296V提高到新结构的650V,而且可靠性改善.通过Si3N4与AlGaN界面横、纵向电场分布,说明了产生表面电场峰的电场调制效应,为设计Si3N4层部分固定正电荷新结构提供了科学依据.Si3N4钝化层部分固定正电荷的补偿作用,使沟道二维电子气浓度增加,导通电阻减小,输出电流提高.