摘要：With a lot of millimeter-wave(mm-Wave)applications being issued,wideband circuits and systems have attracted much attention because of their strong applicability and *** this paper,four transformer-based ultra-wideband mm-Wave circuits demonstrated in CMOS technologies are reviewed from theoretical analysis,implementation,to ***,we introduce a mm-Wave low-noise amplifier with transformer-based Gm-boosting and pole-tuning *** achieves wide operating bandwidth,low noise figure,and good gain ***,we review an injection-current-boosting technique which can significantly increase the locking range of mm-Wave injection-locked frequency *** on the injectionlocked principle,we also discuss an ultra-wideband mm-Wave divider with the transformer-based high-order ***,an E-band up-conversion mixer is presented;using the two-path transconductance stage and transformer-based load,it obtains good linearity and a large operating band.

摘要：Recently, many studies propose the use of ultra-wideband technology for passive and active radio frequency identification systems as well as for wireless sensor networks due to its numerous advantages. By harvesting these advantages of IR-UWB technology at the physical-layer design, this paper proposes that a cross layer architecture platform can be considered as a good integrator for different wireless short-ranges indoor protocols into a universal smart wireless-tagged architecture with new promising applications in cognitive radio for future applications. Adaptive transmission algorithms have been studied to show the trade-off between different specific QoS requirements, transmission rates and distances at the physical layer level and this type of dynamic optimization and reconfiguration leads to the cross-layer design proposal in the paper. Studies from both theoretical simulation and statistical indoor environments experiments are considered as a proof of concept for the proposed architecture.

摘要：An inductorless ultra-Wide Band （UWB） receiver frontend chip design used in wireless communications for the frequency band of 3.1 - 4.8 GHz is presented. This ho-nodyne receiver mainly consists of a diffexential Low Noise Amplifier （LNA） circuit followed by a down-converting mixer. The proposed LNA circuit with a noise canceling resistor is connected to the CMOS device＇s body to reduce the substrate thermal noise. Simulation and measuremnt results show that the chip can reduce the froat-end Noise Figure （NF） about 0.5dB and achieve the Conversion Gain （03） of 19.44-21.57 dB and double-sideband NF less than 7.8 dB. Also, the input third-order interoept point （IIP3） is - 11 dBm, and the input second-order intercept point （IIP2） is 49 dBm. Fabricated in TSMC 0.18 tan technology, this chip occupies only 0. 167 Iron2 and dissipates power 59.2 roW.

摘要：This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.