摘要：The design of a new type of latching voltage comparator ZJ03 is *** voltage comparators consist of multistage DC amplifiers,for which it is difficult to realizehigh speed and high *** ZJ03 comparator contains a controlled positive ***,it is capable of realizing high speed and high *** improving theperformance and producibility,the tolerance extension,design centering and potential adaptingtechniques are used in the design of comparator ZJ03.

摘要：The initial parameters of the superconducting magnetic energy storage (SMES) fed by a voltage source converter (VSMES) are studied and the setting rules are designed in this paper. A time-domain simulation model is established by using the software PSCAD/EMTDC. Based on this model, the application of the VSMES in the power system is used to test the designed rules. The simulation results are valuable for the further research of the initial parameters design of the VSMES.

摘要：A series connected power semiconductor array, with digital control capability could be used for developing single phase AC regulators or other applications such as AC electronic loads. This technique together with an ordinary gapless transformer could be used to develop a low cost AC voltage regulator (AVR) to provide better or comparable specifications with bulky ferro-resonant AVR types. One primary advantage of the technique is that digital control can be used to minimize harmonics. Commencing with a review of AC voltage regulator techniques for single phase power conditioning systems, an analysis and design aspects of this technique is presented with experimental results for AVRs. Guidelines on how to utilize the technique in a generalized basis is also summarized together with a summary of a technique for achieving harmonic control.

摘要：At Physikalisch-Technische Bundesanstalt (PTB), superconducting 10 V circuits for the programmable Josephson voltage standard (PJVS) are routinely manufactured on the basis of NbxSi1-x barrier junctions. This paper describes in detail the basic design principles for an operating frequency of 70 GHz. It starts with single junctions, discusses their insertion into microstriplines and closes with the whole microwave circuit containing 69,632 NbxSi1-x barrier junctions arranged over 128 microstriplines connected in parallel. The microwave attenuation of this junction type is a key parameter for the 10 V design and we report its experimental determination. Special attention has been devoted to subarrays with just a few Josephson junctions in one of the outermost striplines. The arrangement of these subarrays determines the optimum performance of the complete 10 V series array. The high performance of programmable 10 V circuits fabricated at PTB is characterized by measured operating margins in all subarrays of more than 1 mA centered at the same dc bias current. The observed modulation of the current margins, when changing the frequency around 70 GHz, is explained by microwave reflections caused by the rf waveguide inside the cryoprobe. We determine the current margins in dependence of the output power of a microwave synthesizer and show that 60 mW is sufficient to achieve current margins larger than 1 mA.

摘要：Coupled inductor is one appealing technology to improve transient response and reduce output decoupling significantly in interleaved multi-phase voltage regulators (VRs). One well known problem is that coupled inductor winding structure causes PCB routing path longer than discrete inductor design. This paper investigates possible PCB routing schemes for coupled inductor and conducts a fair and quantitative comparison with discrete inductor in a server VR design. Simulation and measurement are also conducted to verify the analysis.

摘要：This paper presents the design of a high performance robust resonant controller for the islanded single-phase microgrid operation on different loads conditions. The design of the controller is done using the results of Negative Imaginary approach. The performance of the proposed controller has been found much effective to track the instantaneous reference grid voltage. The simulation work has been done with the help of MATLAB/SimPower System toolbox. This shows that the proposed controller provides effective control of voltage against the uncertain load conditions.

摘要：The results of comparative DC simulation tests confirm that a proposed modification to the feedback circuit of a Flipped voltage Follower (FVF), to produce a type of ‘Folded’ Flipped voltage Follower (FFVF), is capable of maximising the linear DC operating range for given values of supply rail voltage and operating current.

摘要：In this paper a novel log-domain current-mode integrator based on MOS transistors in subthreshold is proposed. The integrator's time-constant is tunable by varying a reference bias current. By use of the integrator, a fifth-order Chebyshev lowpass filter with 0.1dB ripples is designed. The simulation results demonstrate that the proposed filter has such advantages as low power supply(1.5V), very low power dissipation (μW level), nearly ideal frequency response, very small sensitivity to components in passband, and adjustable cut-off frequency over a wide *** circuit is composed of NMOS transistors and grounded capacitors which make it suitable for fully integrated circuit implementation.

摘要：本文简要介绍了voltageComParato的设计过程，并着重讨论了设计的总体框图和失真较真方面的技术极其结构，并对工作时序和仿真的过程方面进行了陈述。

摘要：10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the *** SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.