摘要：A wideband LC cross-coupled voltage controlled oscillator（VCO） is designed and realized with standard 0. 18 μm complementary metal-oxide-semiconductor（CMOS） technology. Band switching capacitors are adopted to extend the frequency tuning range, and the phase noise is optimized in the design procedure. The functional relationships between the phase noise and the transistors＇ width-length ratios are deduced by a linear time variant （LTV） model. The theoretical optimized parameter value ranges are determined. To simplify the calculation, the working region is split into several sub-ranges according to transistor working conditions. Thus, a lot of integrations are avoided, and the phase noise function upon the design variables can be expressed as simple proportion formats. Test results show that the DC current is 8.8 mA under a voltage supply of 1.8 V; the frequency range is 1.17 to 1.90 GHz, and the phase noise reaches - 83 dBc/Hz at a 10 kHz offset from the carrier. The chip size is 1. 2 mm × 0. 9 mm.

摘要：A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.

摘要：The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency *** order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC *** proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the *** results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 *** measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the *** maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.

摘要：A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.

摘要：The design and fabrication of a RF MEMS switch is reported for the first time in *** switching element consists of a thin metallic membrane,which has the metal-isolator-metal contact and a capacitive shunt switch as single-pole *** an electrostatic potential is applied to the membrane and the bottom electrode,the attractive electrostatic force pulls the metal membrane down onto the bottom *** switch characteristics,such as insertion loss and isolation,depend on the off and *** test results are as follows:the pulldown voltage is about 20V;the insertion loss is less than 0 69dB from DC to 20GHz in the up-state;the isolation is more than 13dB from 14 to 18GHz and 16dB from 18 to 20GHz in the down-state.

摘要：According to federal communication commission (FCC) rules, the 3.1 - 10.6 GHz band is allocated to the amateur ultra wideband (UWB) applications. On the other hand, the 5.15 - 5.825 GHz band is associated with the wireless LAN (WLAN) applications according to IEEE 802.11 and HIPERLAN/2 standards. Therefore, an unwanted intrusion will be expected between these two frequency requests. In This paper a comprehensive review will be done over a wide range of UWB microstrip antennas which all have the band notching property over the WLAN band to effectively avoid this interference. All the band notching techniques in the recent papers will be categorized in 4 distinct methods including the tuning stub, the shaped slot, the parasitic element, and the fractal geometry. A few typical papers will be introduced and evaluated in each category for declaration purposes. At last, a comparison will be done between these methods and the relative papers.

摘要：Y2002-63334-3006 0310669短期速率变化对友好传输控制规约拥挤控制策略的影响模拟=Modeling the effect of short-term rate varia-tions on TCP-friendly congestion control behavior[会,英]/Li,K.& Shor,M.H.//Proceedings of the 2001American Control Conference Vol.4 of 6.—3006～3012(HE)Y2002-63343-974 0310670宽带时分-码分多址媒体存取控制规约的新调度方法=A new scheduling scheme for the wideband

摘要：Y2002-63374-200 0309692智能天线对宽带多径信道的影响:Effects of smart an-tenna in wideband multipath channel[会,英]/Kim,B.-H.& Kim,D.-S.//2001 Joint 4th IEEE InternationalConference on ATM(ICATM’01)and High Speed Intel-ligent Intemet Symposium.—200～203(E)0309693基站天馈系统障碍原因浅析[刊]/王法//移动通信.—2002,26(12).—60～61(C)0309694天线驱动系统的优化设计[刊]/顾灿春//电子机械工程.—2002,18(6).—59～61(C)