摘要：A new switching circuit is presented for the application in the frequency range of 0 to 8 GHz. This switch is electro-thermally actuated and exhibits high radio frequency （RF） performance due to its lateral contact mechanism, It composes of electroplated nickel and silicon nitride as structural materials. The isolation between bias and signal ports is realized by using silicon nitride. In the case of a small deformation, the relation between the displacement of the vertex and the pre-bending angle is analyzed. The metal contact is realized by in-plane motion and sidewall connection. The switches were fabricated using the MetalMUMPs process from MEMSCAP. The RF testing results show that the switch has a low insertion loss of 0. 9 dB at 8 GHz and a high isolation of 30 dB below 8 GHz.

摘要：采用TSMC0.18μmCMOS工艺设计了光接收机宽带前置放大器。该前置放大器采用具有反馈特性的跨阻放大器实现,采用了RGC(RegulatedCasacoe)电路作为输入级,同时在电路中引入电感并联补偿的技术,以拓展前置放大器的带宽。仿真结果表明:1.8V单电压源供电情况下,电路功耗15.2mW,中频互阻增益为58.4dBΩ,-3dB带宽可达到10.2GHz,可工作在10Gb/s速率。

摘要：Based on the 4-channel neural signal regeneration system which is realized by using discrete devices and successfully used for in-vivo experiments on rats and rabbits, a single channel neural signal regeneration integrated circuit （IC）is designed and realized in CSMC ＇ s 0. 6 μm CMOS （ complementary metal-oxide-semiconductor transistor ） technology. The IC consists of a neural signal detection circuit with an adjustable gain, a buffer, and a function electrical stimulation （FES） circuit. The neural signal regenerating IC occupies a die area of 1.42 mm × 1.34 mm. Under a dual supply voltage of ±2. 5 V, the DC power consumption is less than 10 mW. The on-wafer measurement results are as follows： the output resistor is 118 ml）, the 3 dB bandwidth is greater than 30 kHz, and the gain can be variable from 50 to 90 dB. The circuit is used for in-vivo experiments on the rat＇ s sciatic nerve as well as on the spinal cord with the cuff type electrode array and the twin-needle electrode. The neural signal is successfully regenerated both on a rat＇ s sciatic nerve bundle and on the spinal cord.

摘要：对高速4阶级联开关电容Sigma-Delta调制器结构的设计进行了分析,利用MATLAB SIMULIK工具搜寻了系统优化参数,并通过系统行为级仿真对实际高速电路中存在的运算放大器非理想因素(例如有限增益、有限单位增益带宽等)和开关热噪声(KT/C噪声)等因素对系统特性可能产生的影响进行了仿真计算,在此基础上得到了系统设计对实际电路模块参数特性的基本要求,为实际实现高阶Sigma-Delta系统打下了基础。仿真结果表明在考虑到各种实际因素的条件下,64MHz时钟32倍超采样条件下系统精度可以达到14bits。

摘要：This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.

摘要：射频芯片(RFIC)的性能极易受到键合线、外围元件与电路等片外因素的影响,通常一款商用射频芯片的设计需要经过从初始芯片设计、芯片测试验证、修正芯片设计的多轮反复过程。因此射频芯片在设计时就需要对IC电路、键合和片外元件电路进行综合考虑。根据这一特点,结合相关芯片的实践经验,讨论射频芯片测试与验证的一般方法和经验技巧,对RFIC的设计具有实用价值。

摘要：文章介绍了一个应用于低频信号测量,3.3V单电源供电,信噪比达到96.7dB的低功耗的开关电容delta-sigma调制器的设计。根据delta-sigma结构理论以及实际应用范围,论证了采用cas-cade2-1结构3阶delta-sigma调制器的可行性,使得整个三阶结构的稳定输入范围等效于二阶调制器。文章采用自顶向下的设计方法,用simulink对3阶cascade2-1模型进行了系统级仿真,系统仿真加入了白噪声、闪烁噪声等各种低频噪声模型作为约束条件,通过精心调试仿真得到了各模块的指标。采用CSMC0.5μm双多晶三层金属工艺。主要模块包括积分器、比较器,并进行仿真验证,并与预定要求进行比较对照。文章在过采样率为256,采样频率为100kHz情况下对整个调制器电路进行了仿真,与系统仿真进行对照,能够达到16位的精度。整个调制器的静态功耗为1.7mW。

摘要：阐述了在世界和我国的微电子特别是集成电路设计与制造方面的情况和趋势。讨论了集成电路设计人才的工程训练问题。介绍了无生产线集成电路设计问题和工业先进国家对集成电路设计人员的教育成功经验，从而对设立国家专项基金支持集成电路设计人才培养和实现“中国芯片工程”的实现方面提出了具体建议。

摘要：以一个成功实现了的、光纤通信用 CMOS限幅放大器为范例 ,介绍 IC设计和制造的整个流程 ,包括系统定义、电路模拟、版图设计。

摘要：一、引言过去的40年是集成电路迅猛发展的40年,从国防到通信,从工业智能到信息家电,从多媒体到网络,其应用领域已无所不在。而中国作为集成电路的巨大市场,由于缺乏先进的工艺和一流的集成电路设计人才。