摘要：A 1 550 nm long-wavelength vertical cavity surface emitting laser(VCSEL)on InP substrate is designed and fabr *** transfer matrix is used to compute reflectivity spectrum of the designed epitaxial *** epitaxial layers mainly consist of 40 pairs of n-Al_(x )Ga_(y )In_((1-x-y))As/InP,and 6 strain compensated Al_(x )Ga_(y )In_((1-x-y))As/InP quantum wells on n-InP substrate,*** top distributed Bragg reflection(DBR)mirror system has been formed by fabricating 4.5 pairs of SiO_2/*** designed cavity mode is around 1 536 *** dip of the fabricated cavity mode is around 1 530 *** threshold current is 30 mA and the maximum output power is around 270μW under CW operation at room temperature.

摘要：晶体管作为现代电子产业的基石,要求其沟道材料既具有一个合适的带隙又具有较高的迁移率.目前,少层黑磷的结果显示,黑磷既具有一个适中的带隙值,又拥有高于MoS_2的迁移率.但是,目前实验上黑磷迁移率的最大值仅达到1000 cm^2 V^(-1) s^(-1)左右,与传统半导体Si(1400 cm^2 V^(-1) s^(-1))和InP(5,400 ~2 V^(-1) s^(-1))相比还是略逊一筹.本文通过第一性原理模拟,设计了一种新型二维半导体材料—单层SbP.结果表明,单层SbP可以稳定存在,并且带隙值处在刚好合适的范围内,同时,迁移率可以高达20,000 ~2 V^(-1) s^(-1).综合考虑到实验上同种相结构的AsP已经被成功制备得到,和理论上预测H_2,O_2和H_2O仅会通过不明显影响其性质的物理吸附吸附在锑烯表面,我们设计的磷锑化合物会是一种具备实验可能性、高度空气稳定性、并且对人体无毒的高性能二维沟道材料.