摘要：A C-band polarization rotator-splitter based on a mode-evolution structure and an asymmetric directional coupler is proposed. The mode-evolution structure is designed in a bi-level taper through which the TM;mode can evolve into the TE;mode. Then the TE;mode is coupled to the TE;mode at the cross port using the asymmetric directional coupler. The input TE;mode propagates along the waveguide without mode conversion and output at the through port. From the experimental results, the extinction ratio is lower than 30 dB and the excess loss is less than 1 dB for input TE;mode at the whole C-band. For input TM;mode, the ER and the EL are, respectively,lower than-10 and 1.5 dB.

摘要：A 25-channel 200 GHz arrayed waveguide grating （AWG） based on Si nanowire wavegnides is designed, simulated and fab- ricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of-13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ul- traviolet lithography （DUV） and inductively coupled plasma etching （ICP） technologies, the devices are fabricated on sili- con-on-insulator （SOI） substrate.

摘要：10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the *** SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.

摘要：An ultra-compact hybrid-integration receiver optical subassembly(ROSA) with four channels is demonstrated in our laboratory with the size of 23.3 mm × 6.0 mm × 6.5 mm. The ROSA is comprised of a planar lightwave circuit(PLC) arrayed waveguide grating(AWG) chip, a top-illuminated positive-intrinsic-negative photodetector array chip, and a three-dimensional microwave circuit that is specially designed for compact packaging. For each transmission lane, the -3 dB bandwidth of the ROSA is up to 20 GHz, and the maximum responsivity is up to 0.53 A/W. The proposed package structure can be used for smaller package sizes and would be an easy assembling solution for 100 GbE optical communication devices.

摘要：Wire-shaped supercapacitors（SCs） possessing light-weight, good flexibility and weavability have caught much attention, but it is still a challenge to extend the lifespan of the devices with gradual aging due to the rough usage or external factors. Herein, we report a new stretchable and selfhealable wire-shaped SC. In the typical process, two polyvinyl alcohol/potassium hydroxide（PVA/KOH） hydrogel wrapped with urchin-like NiCo2O4 nanomaterials were twisted together to form a complete SC devices. It is noted that the as-prepared PVA hydrogel can be easily stretched up to 300% with small tensile stress of 12.51 kPa, superior to nearly 350 kPa at 300%strain of the polyurethane. Moreover, the wire-like SCs exhibit excellent electrochemical performance with areal capacitance of 3.88 mF cm^-2 at the current density of 0.053 mA cm^-2, good cycling stability maintaining 88.23% after 1000 charge/discharge cycles, and 82.19% capacitance retention even after four damaging/healing cycles. These results indicate that wireshaped SCs with two twisted NiCo2O4 coated polyvinyl alcohol hydrogel fibers is a promising structure for achieving the goal of high stability and long-life time. This work may provide a new solution for new generation of self-healable and wearable electronic devices.

摘要：A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline GaSb nanowires,where Ga droplets were utilized as the *** as-grown GaSb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm^2 V^-1 s^-*** photoresponse properties of the GaSb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible *** results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet,visible,to near-infrared *** the device on rigid substrate,the corresponding responsivity and the detectivity were calculated to be 3.86×10^3 A W-1 and 3.15×10^13 Jones for 500 nm light,and 7.22×10^2 A W-1 and 5.90×10^12 Jones for 808 nm light,respectively,which were the highest value compared with those of other reported Ga1-xInxAsySb1-y structure ***,the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one,but also possessed excellent mechanical flexibility and *** study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown GaSb nanowires and the design of functional nano-optoelectronic devices based on GaSb nanowires.

摘要：We develop a low frequency fiber Fabry–Perot(F-P)seismometer based on transfer function *** seismometer structure and demodulation system accuracy are limitations of low frequency seismic *** transfer function of the F-P seismometer is analyzed,and the mass displacement spectrum(MDS)is *** provides guidance for mechanical structure design and optical interferometer analysis to achieve low *** F-P seismometer prototype is *** experiment shows that the prototype has an average noise of 6.74 ng=p Hz below 50 Hz,and its noise is less than that of the global new high noise model within 0.16–50 Hz,whose potential is considerable.