摘要：It is well known that interleavers play a critical role in Turbo coding/decoding schemes, and contention-free interleaver design has become a serious problem in the paraUelization of Turbo decoding, which is indispensable to meet the demands for high throughput and low latency in next generation mobile communication systems. This paper unveils the fact that interleavers based on permutation polynomials modulo N are contention-free for every window size W, a factor of the intedeaver length N, which, also called maximum contention-free interleavers.

摘要：Information analysis of high dimensional data was carried out through similarity measure application. High dimensional data were considered as the a typical structure. Additionally, overlapped and non-overlapped data were introduced, and similarity measure analysis was also illustrated and compared with conventional similarity measure. As a result, overlapped data comparison was possible to present similarity with conventional similarity measure. Non-overlapped data similarity analysis provided the clue to solve the similarity of high dimensional data. Considering high dimensional data analysis was designed with consideration of neighborhoods information. Conservative and strict solutions were proposed. Proposed similarity measure was applied to express financial fraud among multi dimensional datasets. In illustrative example, financial fraud similarity with respect to age, gender, qualification and job was presented. And with the proposed similarity measure, high dimensional personal data were calculated to evaluate how similar to the financial fraud. Calculation results show that the actual fraud has rather high similarity measure compared to the average, from minimal 0.0609 to maximal 0.1667.

摘要：A double-gate tunnel field-effect transistor （DG tunnel FET） has been designed and investigated for various channel materials such as silicon （Si）, gallium arsenide （GaAs）, alminium gallium arsenide （A1xGa1-xAs） and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are com- pared on the basis of inverse subthreshold slope （SS）, ION/IoFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the A1xGa1-xAs based DG tunnel FET provides a better ION/IOFF current ratio （2.51 × 10^6） as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

摘要：Recently, multiple-input multiple-output (MIMO) relay technique has been received great attention due to its prominent ability to provide broad coverage and enhance the link reliability and spectral efficiency. In this paper, an overview of optimal design for single user and multiuser non-regenerative MIMO relay systems is proposed. We explore some key designs of source node and destination node as well as relay node processing matrices using minimum mean square error (MMSE) criterion under the transmit power constraints. Simulation results compare different methods in terms of the MSE and bit error rate (BER) performance.

摘要：增材制造技术凭借其生产几何复杂结构(如晶格结构)的能力而广受欢迎.在航天航空和汽车领域轻量化设计中,晶格结构具有极大的优势.众所周知,振动问题是航天航空结构设计广泛关注的问题之一,为了避免结构动力破坏,有必要开展结构振动频率研究,尤其是结构自振频率研究.本文针对一阶频率最大化问题,提出了一种维诺梯度随机晶格结构多尺度优化设计方法.首先,在微观尺度上进行了维诺随机晶格微观结构生成和分析.然后,采用无惩罚密度法进行宏观结构优化.最后,基于得到的相对密度分布和映射关系,重构了全尺度维诺梯度随机晶格结构.数值算例验证了该方法在维诺梯度随机晶格结构设计中的正确性和有效性,振动试验也验证了所提出的多尺度方法的有效性和优化的梯度晶格结构在结构动力响应方面的优势.

摘要：This paper demonstrates wide-band CMOS VCO based on the transformer feedback from traditional circuit to our proposed work. The start up condition of the traditional cross-coupled pair is expressed by the high frequency model. The wide band technique of this structure is derived with the help of the high frequency model of the transistor. Therefore, the wide band CMOS VCO based on the common source transformer feedback topology can achieves the high performance in the low voltage and low phase noise. The measurement result of the VCO exhibits the figure of merit, core power consumption and output power at supply voltage 0.8 V are –193.1 dBc/Hz, 4.4 mW and –2.3 dBm, respectively. The phase noise is –124.3 dBc/Hz at 1 MHz offset under the operation frequency 5.8 GHz. And the tuning range of the circuit can obtain 28%, this VCO is fabricated in TSMC 0.18 μm 1P6MCMOS process.

摘要：Based on the property that high degree variable nodes within an irregular LowDensity Parity-Check (LDPC) code have more powerful error-correcting capability than that of low degree variable nodes, a group of irregular LDPC codes with Unequal Error Protection (UEP)property is designed in this letter. Simulation results show that the transmission quality of the image may be effectively improved with this class of irregular LDPC code.

摘要：This paper presents the design of a low power LNA with second stage that uses a notch filter for DS-UWB application. The LNA employs a current reuse structure to reduce the power consumption and an active second order notch filter to produce band rejection in the 5 - 6 GHz frequency band. The input reflection coefficient S11 and output reflection S22 are both less than –10 dB. The maximum power gain S21 is 15 dB while the maximum rejection ratio is over –10 dB at 4.8 GHz. The minimum noise figure is 5 dB. The input referred third-order intercept point (IIP3) is –7 dBm at 6 GHz. The power consumption is 6.4 mW from a 1-V power supply.

摘要：A new optical intensity-based sensing mechanism for the measurement of refractive index and minute displacement is proposed in this paper, which is based on modifying the amount of light coupled between two parallel long-period fiber gratings. The characteristics of this sensing mechanism with experiments and simulation results are demonstrated.

摘要：Both bismuth and copper are non-toxic and earth-abundant elements suitable for lead-free halide perovskite-like photovoltaic devices. Here, we report a highly facile route for in-situ producing copper-bismuth-iodide(CuBiI4) thin films directly on ITO substrate at room temperature, by utilizing a Bi-Cu alloy layer as precursor. X-ray diffraction and transmission electron microscopy(TEM) results verified the formation of well crystallized CuBiI4 thin films with [222] orientation. The transient photovoltage(TPV) analysis revealed that the CuBiI4 is an n-type semiconductor with a suitable band gap of ~1.81 eV, preferable to photoelectric conversion compared with CH3NH3PbI3. It is very interesting that the subsequent spin-coating process of the classical Spiro-MeOTAD organic solution with TBP and acetonitrile resulted in a dense and smooth CuBiI4:SpiroMeOTAD bulk-heterojunction film. The preliminarily fabricated simple sandwich structures of ITO/CuBiI4:Spiro-MeOTAD/Au hybrid solar cell devices displayed efficient photovoltaic performance with the PCE up to 1.119% of the best sample. The room temperature direct metal surface elemental reaction(DMSER) method may provide a new insight for all-inorganic lead free perovskite-like AaBbXx compounds and high performance photovoltaic devices.