摘要：柔性有机突触晶体管(FOSTs)由于其灵活性、生物相容性、易于加工和低复杂性而引起了广泛关注.然而,FOSTs很难在满足装置变形要求的同时保持其突触性质的机械稳定性.在此,我们通过实验发现,弯曲变形对FOSTs的突触性能(即兴奋性突触后电流(EPSC)值)的影响大于对导通电流的影响.此外,通过公式推导,我们证明了通道附近产生的弯曲诱导缺陷状态的密度显著影响突触性能.我们提出了一种使用封装层调整器件稳定段的通用方法.无调节稳定段的普通FOSTs的EPSC值在弯曲后下降了近1.5-2个数量级.相比之下,设计的柔性突触装置表现出相对稳定的EPSC.此外,设计的FOSTs表现出稳定的成对脉冲促进、长期增强和光学突触性能.此外,使用手写人工神经网络在500次弯曲循环前后基于我们的设备进行神经形态计算模拟,该设备在50个学习周期后显示出稳定的识别精度(初始状态下91.55%,500个弯曲周期后90.43%).稳定段在柔性突触晶体管中的成功应用为制造具有机械稳定性的柔性神经形态电子器件提供了一个方便和简单的思路.

摘要：单价Ag+或Li+引入到类金刚石结构的MQ22-(M=Ga,In;Q=S,Se)阴离子基团中能合成出良好的二阶非线性光学(NLO)晶体材料.然而,这些晶体分别面临着较低的抗激光损伤阈值(LIDT)或二氧化硅易被腐蚀等缺点,严重限制了其在高功率激光应用中的实用性.在本研究中,基于类金刚石结构的ZnSe,我们采用[Se_(4)Zn_(13)]Se_(2)4→[ClRb_(3)Ba]Se_(24)非常规的聚阳离子取代策略,设计并合成了一种新型的盐包硫属化合物[Rb_(3)BaCl][In_(8)Se_(14)](1).化合物1属于压缩黄铜矿型硒化物并保持了与AgInSe_(2)相同的晶体对称性(I-42d空间群).值得注意的是,由于InSe_(4)四面体结构单元的平行排列,化合物1具有相位匹配的强二次谐波(SHG)响应(2.0倍于AgGaS_(2)@2.90μm).此外,聚阳离子[Rb_(3)BaCl]^(4+)的引入促进了光学带隙(2.02 eV)的增强,有效地避免了对2.09μm激光的双光子吸收;同时结合较低的热膨胀系数,使得化合物1表现出高的LIDT(3.2倍于AgGaS2@2.09μm).本研究验证了在类金刚石结构中进行聚阳离子取代的可行性,并成功获得了性能优异的中远红外NLO材料.

摘要：Polarized upconversion luminescence(UCL)of lanthanide-doped micro/nano-crystals has shown great promise in single-particle tracking and super-resolution ***,because of the spectral line broadening and multiple sites of lanthanide in upconversion particles(UCPs),the crystal-field(CF)polarization components of UCL are usually ***,we report the linearly polarized UCL in LiLuF_(4):Yb^(3+)/Er^(3+) single microcrystals with resolvable CF transition lines and a polarization degree up to *** CF levels and CF transition lines of Er^(3+),as well as their emission polarization anisotropy,are unraveled for the first time through low-temperature and high-resolution photoluminescence(PL)and UCL *** taking advantage of the well-resolved and highly-polarized CF transition lines of Er^(3+),we demonstrate the application of LiLuF_(4):Yb^(3+)/Er^(3+) single microcrystals as anisotropic UCL probes for orientation *** findings provide fundamental insights into the polarization anisotropy of UCL in lanthanide-doped single particles,thus laying a foundation for the future design of anisotropic luminescent probes towards versatile applications.

摘要：Photonic synaptic transistors are promising neuromorphic computing systems that are expected to circumvent the intrinsic limitations of von Neumann-based *** design and construction of photonic synaptic transistors with a facile fabrication process and highefficiency information processing ability are highly desired,while it remains a tremendous ***,a new approach based on spin coating of a blend of CsPbBr_(3) perovskite quantum dot(QD)and PDVT-10 conjugated polymer is reported for the fabrication of photonic synaptic *** combination of flat surface,outstanding optical absorption,and remarkable charge transporting performance contributes to high-efficiency photon-to-electron conversion for such perovskite-based ***-performance photonic synaptic transistors are thus fabricated with essential synaptic functionalities,including excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF),and long-term *** utilizing the photonic potentiation and electrical depression features,perovskite-based photonic synaptic transistors are also explored for neuromorphic computing simulations,showing high pattern recognition accuracy of up to 89.98%,which is one of the best values reported so far for synaptic transistors used in pattern *** work provides an effective and convenient pathway for fabricating perovskite-based neuromorphic systems with high pattern recognition accuracy.