摘要：83-nm T-shaped gate InP-based In0.52Al0.48As/In0.65Ga0.35As pseudomorphic high electron mobility transistors （PHEMTs） with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation current density/ass of 894 mA/mm, a maximum extrinsic transconductance gm, max of 1640 mS/mm, an extrapolated cutoff frequency ft of 247 GHz and a maximum oscillation frequency fmax of 392 GHz which were based on the measured S-parameters from 1 to 110 GHz. The minimum noise figure （NFmin） measured by the cold-source method is 1 dB at 30 GHz associated with a gain of 14.5 dB at Vds of 0.8 V and Ids of 17 mA. These results were obtained by the combination of increased InAs mole fraction in the channel, gate size scaling, parasitic reduction and the quantization channel. These excellent results make it one of the most suitable devices for millimeter wave （MMW） low noise applications.

摘要：90-nm T-shaped gate InP-based In_（0.52）Al_（0.48）As/In_（0.6）Ga_（0.4）As pseudomorphic high electron mobility transistors were designed and fabricated with a gate-width of 2×30 μm,a source-drain space of 2.5 μm,and a source-gate space of 0.75 μ***,RF and small-signal model characterizations were *** maximum saturation current density was measured to be 755 mA/mm biased at V_（gs）=0.6 V and V_（ds）=1.5 *** maximum extrinsic transconductance was measured to be 1006 mS/mm biased at V_（ds）=—0.1V and V_（ds）=1.5 *** extrapolated current gain cutoff frequency and maximum oscillation frequency based on S-parameters measured from 0.5 to 110 GHz were 180 and 264 GHz,*** inflection point（the stability factor k=1）where the slope from-10 dB/decade（MSG） to-20 dB/decade（MAG） was measured to be 83 *** smallsignal model of this device was also established,and the S-parameters of the model are consistent with those measured from 0.5-110 GHz.

摘要：An ultra-wideband mixing component cascaded by a mixing multi-function chip and a frequency multiplier multi-function chip was demonstrated and implemented using 3D heterogeneous integration based on the silicon adapter board *** layers of high-resistance silicon substrate stack packaging are implemented based on the wafer-level gold-gold bonding *** layer adopts though silicon via(TSV)technology to realize signal interconnection.A core monolithic integrated microwave chip(MMIC)is embedded in the silicon cavity,and the silicon-based filter is integrated with the high-resistance silicon *** interconnect line,cavity and filter of the silicon-based adapter board are designed with AutoCAD,and HFSS is adopted for 3D electromagnetic field *** to the measured results,the radio frequency(RF)of the mixing multi-function chip is 40-44 GHz and its intermediate frequency(IF)can cover the Ku band with a chip size of 10 mm×11 mm×1 *** multiplier multi-function chip operates at 16-20 *** fundamental suppression is greater than 50 dB and the second harmonic suppression is better than 40 dB with a chip size of 8 mm×8 mm×1 *** cascaded fully assembled mixing component achieves a spur of better than-50 dBc and a gain of better than 15 dB.