摘要：The production of high-quality eco-friendly quantum dots(QDs)is challenging because of the efficient yet elusive nonradiative recombination *** study examined the effects of cooling engineering on regulating the excited states to realize high-quality ZnSeTe core-shell *** presence of ultrafast hot-carrier trapping and band-edge carrier trapping is responsible for the poor emission efficiency in ZnSeTe *** above processes can be suppressed simultaneously by engineering the cooling process,and the underlying mechanisms are interrogated by combined electronic and spectroscopic *** engineered ZnSeTe QDs exhibited record-high efficiency(>90%)and stability that were comparable to those of the canonical CdSe *** on the achievement,the ZnSeTe QD-based white light-emitting diodes(WLEDs)showed excellent optical performance,including a high color-rendering index of 80 and an appropriate correlated color temperature of 7391 ***,the WLEDs could serve as light sources in ecofriendly visible light *** results highlight the feasibility of eco-friendly QDs for practical applications without environmental hazards.

摘要：As the base of modern electronic industry,field-effect transistor(FET) requires the channel material to have both moderate bandgap and high mobility. The recent progresses indicate that few-layer black phosphorus has suitable bandgap and higher mobility than two-dimensional(2D) MoS_2, but the experimentally achieved maximal mobility(1000 cm^2 V^(-1) s^(-1)) is still obviously lower than those of classical semiconductors(1,400 and 5,400 cm^2 V^(-1) s^(-1) for Si and InP). Here, for the first time, we report on monolayer antimonide phosphorus(SbP) as a promising 2D channel material with suitable direct bandgap, which can satisfy the on/off ratio, and with mobility as high as 10~4 cm^2 V^(-1) s^(-1)based on density functional theory calculation. In particular,α-Sb_(1-x)P_x monolayers possess 0.3–1.6 eV bandgaps when0.1 ≤ x ≤ 1, which are greater than the minimum bandgap(0.4 eV) required for large on/off ratio of FET. Surprisingly,the carrier mobilities of α-Sb_(1-x)P_x monolayers exhibit very high upper limit approaching 2×10~4 cm^2 V^(-1) s^(-1) when 0 ≤x ≤ 0.25 due to the ultra-small effective mass of holes and electrons. This work reveals that 2D SbP with both suitable bandgap and high mobility could be a promising candidate as eco-friendly high-performance FET channel materials avoiding short-channel effect in the post-silicon era, especially when considering the recent experimental success in realizing arsenide phosphorus(AsP) with similar structure.