摘要：To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tun- neling time and carriers thermal escape time from the quantum well. The calculation results show that with increas- ing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well.