摘要：In the realm of near-infrared spectroscopy,the detection of molecules has been achieved using on-chip waveguides and *** the mid-infrared band,the integration and sensitivity of chemical sensing chips are often constrained by the reliance on off-chip light sources and *** this study,we demonstrate an InAs/GaAsSb superlattice mid-infrared waveguide integrated *** GaAsSb waveguide layer and the InAs/GaAsSb superlattice absorbing layer are connected through evanescent coupling,facilitating efficient and highquality detection of mid-infrared light with minimal *** conducted a simulation to analyze the photoelectric characteristics of the ***,we investigated the factors that affect the integration of the InAs/GaAs⁃Sb superlattice photodetector and the GaAsSb *** thicknesses and lengths for the absorption lay⁃er are *** the absorption layer has a thickness of 0.3μm and a length of 50μm,the noise equiva⁃lent power reaches its minimum value,and the quantum efficiency can achieve a value of 68.9%.The utilization of waveguide detectors constructed with Ⅲ-Ⅴ materials offers a more convenient means of integrating mid-infra⁃red light sources and achieving photoelectric detection chips.