摘要：The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS *** characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping *** MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling *** addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were *** with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was *** greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were *** maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

摘要：Most transmission gratings in the x-ray region work with their first orders and dispersion is limited by the line density achievable with current fabrication technology. We present a novel design of a two-dimensional x-ray transmission grating. The grating works with higher dispersion using its second orders, and the influence from first and third orders can be suppressed. A grating according to the novel design is fabricated and its diffraction performance is tested in comparison with a traditional x-ray transmission grating with the same line density. The novel grating could be especially useful when high dispersion is desired while the fabrication of high-density gratings becomes more difficult.

摘要：A 32-bit pipeline accumulator with carry ripple topology is implemented for direct digital frequency *** increase the throughout while hold down the area and power consumption,a method to reduce the number of the pre-skewing registers is *** number is reduced to 29% of a conventional pipeline *** propagation delay versus bias current of the adder circuit with different size transistors is *** analyze the delay by employing the open circuit time constant *** to the simulation results,the maximum error is less than 8%.A method to optimum the design of the adder based on the propagation delay is *** clock traces for the 32-bit adder are heavily loaded,as there are 40 registers being connected to ***,the differential clock traces,which are much longer than the critical length,should be treated as transmission *** a clock distribution method and a termination scheme are proposed to get high quality and low skew clock signals.A multiple-type termination scheme is proposed to match the transmission line *** 32-bit accumulator was measured to work functionally at 5.3 GHz.

摘要：We synthesized a mesoporous film based on TiO2-reduced graphene oxide(RGO)hybrids using a one-step vapor-thermal method without the need for an additional annealing *** vapor-thermally prepared TiO2-graphene hybrid(VTH)features unique structures with an ultra-large specific surface area of^260 m^2 g^-1 and low aggregation,giving rise to enhanced light harvesting and increased charge generation and separation *** was observed that a mesoporous film with uniform pore distribution is simultaneously obtained during the VTH growth *** a 5.0 wt%RGO VTH film was used as the active layer in photocatalysis,the highest photocatalytic activity for degradation of methyl orange was *** another,when a 0.75 wt%RGO VTH film was used as the photoanode in a dye-sensitized solar cell,the power conversion efficiency reached 7.58%,which represents an increase of 73.1%compared to a solar cell using an a photoanode of pure TiO2 synthesized by a traditional solvothermal *** is expected that this facile method for the synthesis of TiO2/graphene hybrid mesoporous films will be useful in practical applications for preparing other metal oxide/graphene hybrids with ultra-high photocatalytic activity and photovoltaic performance.

摘要：Spiking neural network,inspired by the human brain,consisting of spiking neurons and plastic synapses,is a promising solution for highly efficient data processing in neuromorphic ***,memristor-based neurons and synapses are becoming intriguing candidates to build spiking neural networks in hardware,owing to the close resemblance between their device dynamics and the biological ***,the functionalities of memristor-based neurons are currently very limited,and a hardware demonstration of fully memristor-based spiking neural networks supporting in-situ learning is very ***,a hybrid spiking neuron combining a memristor with simple digital circuits is designed and implemented in hardware to enhance neuron *** hybrid neuron with memristive dynamics not only realizes the basic leaky integrate-and-fire neuron function but also enables the in-situ tuning of the connected synaptic ***,a fully hardware spiking neural network with the hybrid neurons and memristive synapses is experimentally demonstrated for the first time,and in-situ Hebbian learning is achieved with this *** work opens up a way towards the implementation of spiking neurons,supporting in-situ learning for future neuromorphic computing systems.