摘要：The analytical modeling of nanoscale devices is an important area of computer-aided design for fast and accurate nanoelectronic design and optimization. In the present paper, a new approach for modeling semicon- ductor devices, nanoscale double gate DG MOSFETs, by use of the gradual channel approximation （GC） approach and genetic algorithm optimization technique （GA） is presented. The proposed approach combines the universal optimization and fitting capability of GA and the cost-effective optimization concept of quantum correction, to achieve reliable, accurate and simple compact models for nanoelectronic circuit simulations. Our compact models give good predictions of the quantum capacitance, threshold voltage shift, quantum inversion charge density and drain current. These models have been verified with 2D self-consistent results from numerical calculations of the coupled Poisson-Schrrdinger equations. The developed models can also be incorporated into nanoelectronic cir- cuit simulators to study the nanoscale CMOS-based devices without impact on the computational time and data storage.

摘要：An analytical investigation has been proposed to study the subthreshold behavior ofjunctionless gates all around （JLGAA） MOSFET for nanoscale CMOS analog applications. Based on 2-D analytical analysis, a new subthreshold swing model for short-channel JLGAA MOSFETs is developed. The analysis has been used to calculate the subthreshold swing and to compare the performance of the investigated design and conventional GAA MOSFET, where the comparison of device architectures shows that the JLGAA MOSFET exhibits a superior performance with respect to the conventional inversion-mode GAA MOSFET in terms of the fabrication process and electrical behavior in the subthreshold domain. The analytical models have been validated by 2-D numerical simulations. The proposed analytical models are used to formulate the objectives functions. The overall objective function is formulated by means of a weighted sum approach to search the optimal electrical and dimensional device parameters in order to obtain the better scaling capability and the electrical performance of the device for ultra-low power applications.

摘要：The double gate （DG） silicon MOSFET with an extremely short-channel length has the appropriate fea- tures to constitute the devices for nanoscale circuit design. To develop a physical model for extremely scaled DG MOSFETs, the drain current in the channel must be accurately determined under the application of drain and gate voltages. However, modeling the transport mechanism for the nanoscale structures requires the use of overkill meth- ods and models in terms of their complexity and computation time （self-consistent, quantum computations ）. Therefore, new methods and techniques are required to overcome these constraints. In this paper, a new approach based on the fuzzy logic computation is proposed to investigate nanoscale DG MOSFETs. The proposed approach has been implemented in a device simulator to show the impact of the proposed approach on the nanoelectronic cir- cuit design. The approach is general and thus is suitable for any type ofnanoscale structure investigation problems in the nanotechnology industry.

摘要：介绍了机场自动旅客输送系统的一般规划技术。规划技术涉及交通规划、运输组织、线路设计、车站布局以及辅助设施规划等内容。该技术方法已应用于上海浦东国际机场自动旅客输送系统的前期规划阶段。本项研究有助于今后国内机场自动旅客输送系统实施建设。