摘要：For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this *** decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is *** effect of the parasitics is analyzed based on calculation and the parallel bonding is *** storage capacitance of power supply is calculated quantitatively to provide large pulse *** ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is ***,a prototype is built to verify the drain modulation circuit *** experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.