摘要：A wedge shape Si LED is designed and fabricated with 0.35 μm double-grating standard CMOS technology. The device structure is based on the N-well-P+ junction. The P+ has a wedge shape and is surrounded by the N-well. The micrographs of Si LEDs' emitting and layout are captured. The I-V characteristic and spectra of the Si LED are tested. Under room temperature and backward bias, its radiant luminosity is 12 nW at 100 mA, and the wavelength of the emitting peak is located at 764 nm.

摘要：A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.

摘要：高性能赝电容的发展需要从电子转移、电解质离子吸附和扩散方面全面理解电极材料.本论文结合第一性原理与转移矩阵法,以TiO_(2)为原型,通过引入各种缺陷,即氧缺陷(V_(O))和共掺杂缺陷(V_(O)+N_(O)),在综合考虑以上因素后获得了较高的赝电容.与本征TiO_(2)(300 F g^(-1))相比,有缺陷的TiO_(2)产生的赝电容高达1700 F g^(-1).此外,缺陷会使得表面能带弯曲减小电子传输势垒,H离子在TiO_(2)-V_(O)中显示出比在TiO_(2)-V_(O)+N_(O)中高得多的势垒,表明在共掺杂体系中H扩散更容易.这项工作为电解质离子的吸附和扩散以及缺陷对电子传输的影响提供了见解,对于下一代超级电容器电极材料的设计和优化具有重要意义.