摘要：The development of a high-performing pseudocapacitor requires a comprehensive understanding of electrode materials from the aspects of electron transfer and electrolyte ion adsorption and ***,these factors are considered over the prototype TiO_(2),and a high pseudocapacitance is achieved via the introduction of various defects,i.e.,oxygen defect(V_(O))and co-doped defect(V_(O)+N_(O)).The study is based on joint explorations of first-principle calculations and the transfer matrix *** to pristine TiO_(2)(300 F g^(-1)),defective TiO_(2) produces pseudocapacitance as high as 1700 F g^(-1).Moreover,defects induce small barriers for electron transmission caused by surface band *** climbing image nudged elastic band diffusion of H ions displays a much higher barrier in TiO_(2)-V_(O) than in TiO_(2)-V_(O)+N_(O).Such a result indicates easy H diffusion in the co-doped *** work provides insights into the adsorption and diffusion of electrolyte ions and the influence of defects on electron *** results are also significant for the design and optimization of electrode materials for the next generation of supercapacitors.

摘要：类脑计算是后摩尔时代集成电路发展的重要方向,开发能够模拟理想突触行为的人工突触器件是构建神经元-突触-神经元连接方式的类脑计算芯片的关键.铁电薄膜材料具有独特的非易失性极化,极化的可塑性与生物突触的可塑性十分类似,因此铁电突触器件近年来受到了广泛关注.本文从器件突触功能模拟和类脑计算应用两个方面对铁电突触器件的研究进展进行了综述.结果表明,铁电突触器件具有两端和三端两种典型结构.除了能有效模拟生物突触功能,铁电突触器件还具有结构简单、功耗低、稳定性高、开关比大及编程速度快等优点.在应用层面,基于铁电突触的神经网络在图像识别方面的研究取得了一系列进展.此外铁电突触还被应用于触觉和视觉仿生.虽然取得了丰富的研究进展,但铁电突触器件目前仍停留在原理的提出和实验验证阶段,在突触性能调控机理、可靠性评价标准、阵列结构优化设计、高密度集成工艺、神经形态计算架构设计、新颖应用场景拓展等方面的研究都存在不小的挑战,这些也是未来铁电突触研究所要聚焦的方向.

摘要：The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and *** this study,we designed an a-phase indium selenide(a-In_(2)Se_(3))transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)*** an optic-neural synapse for low-level sensory processing,the a-In_(2)Se_(3)transistor exhibits a high photoresponsivity(2855 A/W)and detectivity(2.91×10^(14)Jones),facilitating efficient feature *** high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50μs and ultralow energy consumption of 0.37 aJ/*** AI vision system using a-In_(2)Se_(3)transistors has been *** achieved an impressive recognition accuracy of 92.63%within 12 epochs owing to the synergistic combination of the PIS and CIM *** study demonstrates the potential of the a-In_(2)Se_(3)transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.

摘要：Aqueous Zn-iodine(Zn-I_(2))batteries have attracted extensive research interest as an emerging redox conversion energy storage system due to the low cost and high ***,the shuttling effects of polyiodides arising from incomplete redox conversion and inhomogeneous Zn plating on the Zn anode surface always hinder the commercial application of Zn-I_(2)*** this work,a two-birds-with-one-stone strategy is reported for long-life Zn-I_(2)*** on the strategy,the sulfonate-functionalized carbon fiber not only acts as the excellent iodine limiter to inhibit iodine species shuttling,but also as the uniform Zn plating guidance layer on the Zn anode surface to prevent the inhomogeneous deposition of Zn^(2+).Consequently,a superior cycling stability(a capacity of 124 mAh g^(-1)after 10,000 cycles at 5 A g^(-1))is *** calculations illustrate that sulfonate groups successfully induce charge redistribution on the carbon substrate,thereby strengthening the electronic interactions of the iodine species with the carbon *** charge-enriched sulfonate groups can guide the uniform deposition of Zn^(2+)through a strong Coulombic effect with Zn^(2+).This work gives a new perspective on the integrated design of cathodes and anodes for rechargeable batteries.