摘要：A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the *** results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and the robustness to noise ***,a Monte Carlo analysis indicates that the proposed domino OR gate is more robust to parameter variation compared to a conventional domino OR gate.