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2016米兰全球展之莫斯科展:新的增长力量
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《设计》2017年 第4期30卷 158-159页
作者:Emma Saloni World wide MoscowSaloni World Wide Moscow 
2016米兰全球展之莫斯科展是强劲逆转负面趋势的有力证明。专业运营商和参展国家之间的会谈次数众多且多有裨益,也证实了该活动在俄罗斯和前苏联共和国之间的推动作用。去年10月在莫斯科番红花世博国际展览中心举办的第十二届米兰全球...
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Optical design of adjustable light emitting diode for different lighting requirements
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《Chinese Physics B》2012年 第12期21卷 436-439页
作者:芦佳宁 余杰 童玉珍 张国义Research Center for Wide Gap SemiconductorPeking University 
Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range in...
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Design of a CMOS multi-mode GNSS receiver VCO
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《Journal of Semiconductors》2012年 第5期33卷 99-104页
作者:龙强 庄奕琪 阴玥 李振荣National Key Laboratory of Wide Band-Gap Semiconductor TechnologySchool of MicroelectronicsXidian University 
A voltage-controlled oscillator(VCO) with dual stages of accumulation mode varactors for a multimode global navigation satellite system(GNSS) application,which adopts sigma-delta fractional-N technology in the syn...
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Design of a 0.18μm CMOS multi-band compatible low power GNSS receiver RF frontend
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《Journal of Semiconductors》2011年 第3期32卷 116-126页
作者:李兵 庄奕琪 龙强 靳钊 李振荣 靳刚Key Laboratory of the Ministry of Education for Wide Bandgap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University 
This paper presents the design and implementation of a fully integrated multi-band RF receiver frontend for GNSS applications on L-band.A single RF signal channel with a low-IF architecture is adopted for multi-band o...
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Through-silicon-via crosstalk model and optimization design for three-dimensional integrated circuits
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《Chinese Physics B》2014年 第3期23卷 591-596页
作者:钱利波 朱樟明 夏银水 丁瑞雪 杨银堂School of Information Science and Engineering Ningbo University School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices 
Through-silicon-via (TSV) to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits (3D ICs). Based on the frequency dependent equivalent electrical ...
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Design of an ultra-low-power digital processor for passive UHF RFID tags
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《Journal of Semiconductors》2009年 第4期30卷 86-89页
作者:施旺根 庄奕琪 李小明 王向华 靳钊 王丹Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Institute of Microelectronics Xidian University 
A new architecture of digital processors for passive UHF radio-frequency identification tags is proposed. This architecture is based on ISO/IEC 18000-6C and targeted at ultra-low power consumption. By applying methods...
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Design and analysis on four stage SiGe HBT low noise amplifier
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《High Technology Letters》2015年 第3期21卷 358-363页
作者:井凯 Zhuang Yiqi Li Zhenrong Lin ZhiyuDepartment of MicroelectronicsXidian University State Key Laboratory of Wide Band Gap Semiconductor 
Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is *** amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on line...
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Effect of dummy vias on interconnect temperature variation
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《Chinese Science Bulletin》2011年 第21期56卷 2286-2290页
作者:WANG Zeng DONG Gang YANG YinTang LI JianWeiKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and DevicesMicroelectronics InstituteXidian UniversityXi'an 710071China 
The number of the dummy via can significantly affect the interconnect average *** paper explores the modeling of the interconnect average temperature in the presence of multiple dummy *** proposed model incorporates t...
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Design of a dual-channel multi-mode GNSS receiver with a∑△ fractional-N synthesizer
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《Journal of Semiconductors》2012年 第11期33卷 83-89页
作者:龙强 庄奕琪 阴玥 李乐 王晋 李振荣 刘乾坤 王磊National Key Laboratory of Wide Band-Gap Semiconductor TechnologySchool of MicroelectronicsXi'dian University China Key SystemCETCWuxi 214072China 
A 72 mW highly integrated dual-channel multimode GNSS(global navigation satellite system) receiver with aΣ△fractional-N synthesizer which covers GPS L1 and the Compass B1/B2/B3 band is *** chip was fabricated in a...
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Hole scattering mechanism of strained Si/(111)Si_(1-x)Ge_x
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《Science China(Physics,Mechanics & Astronomy)》2011年 第10期54卷 1801-1804页
作者:WANG Cheng ZHANG HeMing SONG JianJun HU HuiYongKey Lab of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China 
Based on Fermi’s golden rule and the theory of Boltzmann collision term approximation, the hole scattering mechanism ofstrained Si/(111)Si1 xGexwas established, including ionized impurity, acoustic phonon, non-polar ...
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