摘要：To improve the compensation for the inherent instability in a current mode converter, the adaptive slope compensation, giving attention to the problems of the traditional compensation on compensation accuracy, loading capability and turning jitter, is presented. Based on the analysis of current loop, by detecting the input and output voltage, converting the adaptive slope compensation current, the compensation of the current loop is optimized successfully. It can not only improve the compensation accuracy but also eliminate the over compensation, the turning jitter and the poor loading capability in the reported slope compensation. A power supply chip with adaptive slope compensation has been fabricated in a 0.35 μm CMOS process. The measurement results show that the chip starts up and operates steadily with the constant current limit under conditions of 5 V input voltage, from 10% to 100% duty cycle.

摘要：This paper presents a single event transient(SET) suppressor circuit,which can suppress the effect of SET in charge pump(CP) on the whole PLL frequency synthesizers,and at the same time it brings little negative effect to the system during normal *** the proposed SET suppressor circuit only includes a resistor,a PMOS and an NMOS device,little area penalty is *** preventing SET propagating from CP to low pass filter(LPF) and VCO when a single event strikes on CP output node,the system shows excellent hardness to SET in *** simulations are performed on TCAD *** results show that a single event with an LET at 80 MeV cm 2 /mg can only induce approximately 2.3 mV disturbance on the control voltage of VCO.

摘要：A radiation-hardened-by-design phase-locked loop（PLL） with a frequency range of 200 to 1000 MHz is *** presenting a novel charge compensation circuit,composed by a lock detector circuit,two operational amplifiers,and four MOS devices,the proposed PLL significantly reduces the recovery time after the presence of a single event transient（SET）.Comparing with many traditional hardened methods,most of which endeavor to enhance the immunity of the charge pump output node to an SET,the novel PLL can also decrease its susceptibility in the presence of an SET in other blocks.A novel system model is presented to describe immunity of a PLL to an SET and used to compare the sensitivity of traditional and hardened PLLs to an *** SET is simulated on Sentaurus TCAD simulation workbench to model the induced pulse *** simulation with a 130 nm CMOS process model shows that the recovery time of the proposed PLL reduces by up to 93.5%compared with the traditional one,at the same time,the charge compensation circuit adds no complexity to the systemic parameter design.

摘要：Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.

摘要：A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.

摘要：The electrochemical dissolution and passivation of laser additive manufactured Ti6Al4V were investigated through Tafel polarization,potentiostatic polarization and AC impedance *** results show that the solution treatment−aging(STA)process aggravates the element micro-segregation compared to the annealing process,leading to varied Al and V contents of the phases from different *** is proven that either Al-rich or V-rich condition can highly affect the electrochemical dissolution behaviors due to thermodynamical instability caused by element *** dissolution rate in the metastable passivation process is controlled by the stability of the produced film that is affected by phases distribution,especially the difficult-to-dissolve *** then,the dissolution rate of the phases in the transpassivation region is consistent with the rank in the activation process because the dense film is not capable of being *** to the annealed sample,the higher dissolution rate of the STA sample is beneficial to the electrochemical machining(ECM)of Ti6Al4V.